Do you want to contribute fundamentally to the quality of research and development? Join us as a process step engineer?
The MOVPE technology is used at imec to epitaxially grow AlGaN/GaN based materials for power and RF transistors because of their higher critical electric field for breakdown and faster switching speed. It is expected that a significant power saving will be realized over the conventional Si power devices, thus contributing to the overall energy efficiency of power supplies, photovoltaic inverters, and many other power systems.
Key to all these applications is the growth of the GaN hetero structures on 200 mm Si, using metalorganic vapour phase epitaxy (MOVPE, also known as MOCVD).
To reinforce imec’s R&D in this field, we are looking for a hands-on (m/f) R&D engineer in MOVPE GaN epitaxy, which is eager to contribute to this technological challenge.
What you will do
You are member of the epitaxy research group (EPI), which is responsible for developing growth processes in close collaboration with imec’s device integration departments. You work in a cross-functional team of about 15 people with whom you interact frequently. You will work in a dynamic multidisciplinary and multicultural environment in close cooperation with researchers, process and hardware engineers, industrial assignees, and device experts.
As a Researcher on Epitaxial growth, you will be responsible for MOVPE processes of III-N materials. Primarily, you are responsible for developing the processes that are required by imec’s programs or customers.
More specifically, you will:
You will be coached on-the-job by a senior MOVPE scientist.